PART |
Description |
Maker |
KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40 SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd. PROM MCNIX[Macronix International]
|
SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM From old datasheet system 1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc] SST[Silicon Storage Technology, Inc]
|
M36DR432C M36DR432CA10ZA6T M36DR432CA85ZA6T M36DR4 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M36DR432A M36DR432A100ZA6C M36DR432A100ZA6T M36DR4 |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
V53C104HK55L V53C104HP60L |
IC OPAMP DUAL 16V DIP8 ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 超高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd.
|
V53C16256 V53C16256H V53C16256HK60 |
256K x 16bit fast page mode CMOS dynamic RAM 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp] MOSEL[Mosel Vitelic Corp] Mosel Vitelic Corp
|
IS41LV8200 IS41LV8200-50J IS41LV8200-50JI IS41LV82 |
5V 2M x 8(16-MBIT) dynamic RAM with edo page mode 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 2M X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
V53C104A V53C104AK V53C104AK-100 V53C104AK-80 V53C |
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
CY62147DV30 CY62147DV30LL-70ZSXI CY62147DV30L CY62 |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 4-Mbit (256K x 16) Static RAM 4兆位56K × 16)静态RAM
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|